Browse Prior Art Database

IMPROVED AL TO CR/SI/N CONTACT RESISTANCE

IP.com Disclosure Number: IPCOM000006632D
Original Publication Date: 1992-Aug-01
Included in the Prior Art Database: 2002-Jan-17

Publishing Venue

Motorola

Related People

Authors:
Tom Anderson Keenan Evans Don Warner James R. Black

Abstract

For several years thin film resistors composed of chromium, silicon and nitrogen (CrlSi/N) have been used in many Motorola devices. These thin tihn CrlSilN resistors were originally developed to produce sheet resis- tivity, following high temperature anneal, and TCR val- ues compatible with the manufacture of these devices.