Browse Prior Art Database

3D MERGED MOSFET-BIPOLAR DEVICES

IP.com Disclosure Number: IPCOM000006644D
Original Publication Date: 1992-Dec-01
Included in the Prior Art Database: 2002-Jan-18
Document File: 5 page(s) / 193K

Publishing Venue

Motorola

Related People

Authors:
Carlos Mazure Marius Orlowski Jon Fitch Jim Hayden

Abstract

A merged MOSFET-Bipolar structure with 3D archi- tecture is proposed. The proposed concept is compati- ble with 16Mb SFL4M and 0.35pm design rules, and it has the potential of further scalability. It could also f&ill on-pitch requirements, which is not possible with the present solutions /l/ due to the area required. In con- trast to the present known solutions /I/ our invention reduces the area required by overlapping the bipolar device with the preformed MOSFET and/or allows the full bipolar formation and modular integration after the MOSFET formation.