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PROTECTIVE DEVICE STRUCTURE FOR SIGNIFICANTLY REDUCING BREAKDOWN VOLTAGE REQUIREMENTS OF POWER DEVICES

IP.com Disclosure Number: IPCOM000006655D
Original Publication Date: 1992-Dec-01
Included in the Prior Art Database: 2002-Jan-21

Publishing Venue

Motorola

Related People

Authors:
J. Staudinger J. M. Golio G. Norris R. Davies

Abstract

Radio frequency (RF) transistors are typically uti- lized in communication products including cellular tele- phones for amplifying RF signals to high power levels such that the information can be transmitted with an antenna. Typical equipment architectures place the last amplifier stage prior to the antenna, and thus the antenna effectively terminates the output of the transistor. This radio architecture results in the antenna loading the RF transistor's output with a rather wide range of possible impedance levels. A power amp&r specification requir- ing the amplifier to survive a defined range of imped- ance levels is termed ruggedness. This article describes a device structure which enhances the ability of the RF transistor to survive ruggedness.