Browse Prior Art Database

A NEW ISOLATION PROCESS FOR VARIABLE WIDTH AND DEPTH TRENCHES BY USING A GLASS FRIT/POWDER

IP.com Disclosure Number: IPCOM000006737D
Original Publication Date: 1993-Mar-01
Included in the Prior Art Database: 2002-Jan-28
Document File: 2 page(s) / 112K

Publishing Venue

Motorola

Related People

Authors:
Henry G. Hughes Juergen Foerstner Marilyn J. Stuckey Julia A. Jones

Abstract

The ability to form variable width and variable depth isolation regions on the same device has been diicult to achieve in high density semiconductor devices. A new method for planatiation and bonding, which is simple to use, ffis variable width and depth trenches, shows excellent planarization, provides excellent RX isolation, and can be used to provide very shallow, isolated active areas is described herein.