A NEW ISOLATION PROCESS FOR VARIABLE WIDTH AND DEPTH TRENCHES BY USING A GLASS FRIT/POWDER
Original Publication Date: 1993-Mar-01
Included in the Prior Art Database: 2002-Jan-28
The ability to form variable width and variable depth isolation regions on the same device has been diicult to achieve in high density semiconductor devices. A new method for planatiation and bonding, which is simple to use, ffis variable width and depth trenches, shows excellent planarization, provides excellent RX isolation, and can be used to provide very shallow, isolated active areas is described herein.