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BIAS SCHEMES FOR ENHANCEMENT AND DEPLETION MODE GaAsFETS In SOURCE-FOLLOWER CONFIGURATION

IP.com Disclosure Number: IPCOM000006765D
Original Publication Date: 1993-Mar-01
Included in the Prior Art Database: 2002-Jan-30
Document File: 3 page(s) / 72K

Publishing Venue

Motorola

Related People

Authors:
Fred Bonn

Abstract

The depletion mode device operates with a negative the negative feedback to Ql through R2. The voltage is gate-source voltage on Ql. By modifying the circuit of a stronger function of current in the connection mode Figure 1 to that of Figure 2, the problem is overcome. of Q3 (drain-gate) than a &ular diode. This same cir- The circuit operates on the same concept. Q3 replaces wit can be used to control an E-mode device but offers D4 in the stack. Q4 acts as a current mirror to provide no advantage and has more components.