Browse Prior Art Database

STRUCTURE AND METHOD FOR ETCH MONITORING THROUGH ELECTRON CHARGING

IP.com Disclosure Number: IPCOM000006781D
Original Publication Date: 1993-Mar-01
Included in the Prior Art Database: 2002-Jan-31
Document File: 3 page(s) / 124K

Publishing Venue

Motorola

Related People

Authors:
Marco Racanelli Clifford I. Drowley Lisa K Garling

Abstract

A sidewall spacer is used to define deep-submicron features in "slot" processes for many advanced technologies [l-3]. Optical techniques cannot be used to endpoint etches that open these narrow spaces because of the small open area. For the same reason, conven- tional inspection techniques cannot be used. A technique and structure have been developed for the nondestructive evaluation of etches that open deep-submicron spaces. Our approach allows detection of the successful com- pletion ofa slot etch through the use ofelectron charging.