A PLANAR POLYSILICON RESISTOR PROCESS FOR ICs
Original Publication Date: 1993-Jun-01
Included in the Prior Art Database: 2002-Feb-11
Typically, to produce polysilicon thin tilm resistors for integrated circuits, polysilicon is deposited on the wafer surface and doped by ion implantation. The polysilicon is then patterned using photoresist and RIE etched to define the shape of the resistor. The resistor values are controlled by the cross-sectional area, resis- tivity and length of the polysilicon. The polysilicon is highly doped before etching to yield resistors with typi- cal values of 200-4000 Q.