Browse Prior Art Database

A PLANAR POLYSILICON RESISTOR PROCESS FOR ICs

IP.com Disclosure Number: IPCOM000006945D
Original Publication Date: 1993-Jun-01
Included in the Prior Art Database: 2002-Feb-11
Document File: 2 page(s) / 141K

Publishing Venue

Motorola

Related People

Authors:
Thomas Baker Bernie Boland

Abstract

Typically, to produce polysilicon thin tilm resistors for integrated circuits, polysilicon is deposited on the wafer surface and doped by ion implantation. The polysilicon is then patterned using photoresist and RIE etched to define the shape of the resistor. The resistor values are controlled by the cross-sectional area, resis- tivity and length of the polysilicon. The polysilicon is highly doped before etching to yield resistors with typi- cal values of 200-4000 Q.