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MASKLESS WELL PROCESS

IP.com Disclosure Number: IPCOM000006991D
Original Publication Date: 1993-Oct-01
Included in the Prior Art Database: 2002-Feb-14

Publishing Venue

Motorola

Related People

Authors:
Robert Reuss

Abstract

The success of this method depends on several factors: .NMOS short channel effects are minimal, thus P-well surface doping can be relatively low (4E17/cm').