Browse Prior Art Database

IMPROVEMENT OF SILICON ON INSULATOR WAFER SURFACE QUALITY

IP.com Disclosure Number: IPCOM000007011D
Original Publication Date: 1993-Oct-01
Included in the Prior Art Database: 2002-Feb-18

Publishing Venue

Motorola

Related People

Authors:
Robert H. Reuss Donald Hughes Juan Carrejo Ray Wells

Abstract

Silicon on insulator (SOI) has been used for many years for special applications. The major SOI tech- nology has been silicon on sapphire (SOS) which has been used in military and space programs because of radiation tolerance (1). SO1 has found only limited applications because of its higher cost. The increased cost is the result of significantly higher wafer prices (because of complex manufacturing) and also lower process yield because of defects. Recently there has been a resurgence of interest in SOI for applications such as high temperature electronics (2), high voltage electronics (3), and very low volt- age electronics (4).