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POWER AMPLIFIER PROTECTION CIRCUIT

IP.com Disclosure Number: IPCOM000007016D
Original Publication Date: 1993-Oct-01
Included in the Prior Art Database: 2002-Feb-18

Publishing Venue

Motorola

Related People

Authors:
Alex Hietala Greg Black

Abstract

Two major goals ofany cellular telephone design are to minimize cost and to minimize current. Recently power amplifiers designed using Hetero- junction Bipolar Transistors (HBT's) have become available to aid in achieving these goals in the area of the RF power amplifier. These devices exhibit improved efficiency over standard silicon devices and appear to cost considerably less than power ampli- fier modules in use today, due to the smaller and simpler physical packaging ofthe devices.