Browse Prior Art Database

DIFFUSED ATOMIC BONDED WAFER

IP.com Disclosure Number: IPCOM000007042D
Original Publication Date: 1993-Oct-01
Included in the Prior Art Database: 2002-Feb-20
Document File: 2 page(s) / 122K

Publishing Venue

Motorola

Related People

Authors:
Jose Ramirez Min Zou

Abstract

A new process that offers lower wafer cost with no crystallographic defects, improved thickness and resistivity uniformity within the wafer for tighter device electrical parametric distributions with simi- lar RBSOA capabilities is the "Diffused Atomic Bonded Wafer? Figure #l shows a cross section of a Diffused Atomic Bonded wafer.