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RESISTANCE REDUCER FOR FOCUSED ION BEAM VAPOR DEPOSITION

IP.com Disclosure Number: IPCOM000007179D
Original Publication Date: 1994-Jun-01
Included in the Prior Art Database: 2002-Mar-04

Publishing Venue

Motorola

Related People

Authors:
David H. Perrin Wayland C. Seifert

Abstract

The present technology of Focused Ion Beam deposition of a metal film, uses liquid gallium as the source of positively charged ions that are accel- erated and focused to form a high-resolution beam. The beam can cut openings in the surface (cross- section) and additionally, using a gas injection sys- tem, a metal film such as tungsten or platinum can be selectively deposited onto the device surface where electrical connection between conductors is desired, Figure 1.