RESISTANCE REDUCER FOR FOCUSED ION BEAM VAPOR DEPOSITION
Original Publication Date: 1994-Jun-01
Included in the Prior Art Database: 2002-Mar-04
The present technology of Focused Ion Beam deposition of a metal film, uses liquid gallium as the source of positively charged ions that are accel- erated and focused to form a high-resolution beam. The beam can cut openings in the surface (cross- section) and additionally, using a gas injection sys- tem, a metal film such as tungsten or platinum can be selectively deposited onto the device surface where electrical connection between conductors is desired, Figure 1.