NONVOLATILE MEMORY DEVICE USING RESONANT TUNNELING FOR LOW VOLTAGE APPLICATIONS
Original Publication Date: 1994-Jun-01
Included in the Prior Art Database: 2002-Mar-06
We propose a new programming mechanism for non-volatile devices using the resonant tunneling mechanism for efftcient charging of the floating gate at much lower control gate and drain bias than used presently. The resonant tunneling path through the insulator can be achieved by introduction, either by deposition or by implantation, of appropriate impu- rity energy levels within the forbidden band-gap of the dielectric. No retention problems during the read operation are anticipated.