Dismiss
InnovationQ and the IP.com Prior Art Database will be updated on Sunday, December 15, from 11am-2pm ET. You may experience brief service interruptions during that time.
Browse Prior Art Database

NONVOLATILE MEMORY DEVICE USING RESONANT TUNNELING FOR LOW VOLTAGE APPLICATIONS

IP.com Disclosure Number: IPCOM000007221D
Original Publication Date: 1994-Jun-01
Included in the Prior Art Database: 2002-Mar-06

Publishing Venue

Motorola

Related People

Authors:
Marius Orlowski Jack Higman Karl Hess* Matthew Noell

Abstract

We propose a new programming mechanism for non-volatile devices using the resonant tunneling mechanism for efftcient charging of the floating gate at much lower control gate and drain bias than used presently. The resonant tunneling path through the insulator can be achieved by introduction, either by deposition or by implantation, of appropriate impu- rity energy levels within the forbidden band-gap of the dielectric. No retention problems during the read operation are anticipated.