POLYSILICON DOPING BELOW PHOSPHOROUS SOLID SOLUBILITY
Original Publication Date: 1994-Jun-01
Included in the Prior Art Database: 2002-Mar-06
This paper describes a new polysilicon doping process. The equipment is a standard atmospheric thermal diffusion furnace. The dopant source is liq- uid phosphorous oxytrichloride. Polysilicon resistiv- ity uniformity improves because the deposition and drive steps are processed at different temperatures.