IMPROVED POWER HANDLING ELECTRONIC PF SWITCH
Original Publication Date: 1994-Oct-01
Included in the Prior Art Database: 2002-Mar-11
Electronic RF switches, such as PIN diode or GaAs FET switches are essentially non linear devices. Thus their behavior is affected by the RF signal power. As RF power is increased, insertion loss and harmonic content are increased. Most commercial switches, therefore, specify 1dB compression point and 2nd and 3rd order intercept points. For a given device, improvement in these parameters is possi- ble by changing the switch drive. Thus, high power switches ohen require high current (PIN diode switches), or high voltage (FET switches).