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Disclosed is a method for the use of an autoclave for improved wafer bonding and increased manufacturing throughput. Benefits include improved reliability, reduced defects, and improved throughput.
English (United States)
This text was extracted from a Microsoft Word document.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately
63% of the total text.
Method for the use
of an autoclave for improved wafer bonding and increased manufacturing
Disclosed is a method
for the use of an autoclave for improved wafer bonding and increased
manufacturing throughput. Benefits include improved reliability, reduced
defects, and improved throughput.
autoclave is a large vessel that safely contains high-pressure gas, often much
greater than 100 psi. The semi-liquid can be heated in the vessel allowing even
heating and the application of pressure to the wafers to be bonded.
Conventionally, wafers are bonded one
at a time in a chamber with pressure and heat applied through a rigid platen
(see Figure 1). Because the bonding process requires pressure and temperature
to be applied for approximately 30 minutes, parallel processing is required for
disclosed method uses an autoclave to apply pressure and heat in the wafer
bonding process on 300-mm wafers (see
Figure 2). The key elements of
the method include:
• Uniform pressure–Because
Si wafers are extremely flat, using air pressure to apply the bonding force delivers uniform and
conformable pressure across the wafer.
temperature–Heated gas delivers uniform
heating across the wafer during bonding.
• High throughput–With an
autoclave, large numbers of wafers can be batch processed when the wafers are aligned.
• Vacuum bag–The wafers
to be bonded must be placed inside a flexible bag that is evacuated
and then seale...