NOVEL USES OF A SILICON CARBIDE SUSCEPTOR FOR RAPID THERMAL PROCESSOR
Original Publication Date: 1994-Oct-01
Included in the Prior Art Database: 2002-Mar-14
One of the major problems with using a Rapid Thermal Annealer (RTA) in a manufacturing area is the tool's ability to accurately measure and con- trol temperature. The temperature measurement is made on the backside of each wafer processed in the RTA. Product wafers in a manufacturing line have a variety of processing steps that will change the emissivity of each wafer. For example the sili- con vendor growth and polish techniques, dielectric deposition, RIE etching, wet processing, will change the emissivity reading. Any variation in the back- side condition of the wafers will cause a change in the emissivity reading resulting in different wafer temperatures.