A NOVEL FURNACE CANTILEVER SYSTEM FOR SHALLOW JUNCTION DIFFUSION PROCESSES
Original Publication Date: 1995-Mar-01
Included in the Prior Art Database: 2002-Mar-15
Modern bipolar integrated circuits have demand- ing junction profile requirements. Device designs that have 0.3 pm base-collector junction depths and 0.1 micron emitter-base junction depths require careful control of thermal cycles during processing. For the emitter anneal application, a novel diffusion canti- lever system has been designed that maintains shal- low junctions with sharp junction interface profiles.