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IMPROVED CMOS LDD PROCESS Disclosure Number: IPCOM000007346D
Original Publication Date: 1995-Mar-01
Included in the Prior Art Database: 2002-Mar-18

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Papu Maniar Bich-Yen Nguyen Jon Fitch


We will assume the twin wells, isolation, punchthrough and Vt adjustments, gate oxide growth have been completed. Next the gate poly and its capped oxide has been etched and stopped on the gate oxide. We pick up the process at this stage.