Browse Prior Art Database

IMPROVED CMOS LDD PROCESS

IP.com Disclosure Number: IPCOM000007346D
Original Publication Date: 1995-Mar-01
Included in the Prior Art Database: 2002-Mar-18

Publishing Venue

Motorola

Related People

Authors:
Papu Maniar Bich-Yen Nguyen Jon Fitch

Abstract

We will assume the twin wells, isolation, punchthrough and Vt adjustments, gate oxide growth have been completed. Next the gate poly and its capped oxide has been etched and stopped on the gate oxide. We pick up the process at this stage.