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FABRICATION OF A SILICON DIOXIDE/NITRIDE MULTI-LAYER STACK AS A LOW-K DIELECTRIC FILM

IP.com Disclosure Number: IPCOM000007368D
Publication Date: 2002-Mar-19
Document File: 7 page(s) / 70K

Publishing Venue

The IP.com Prior Art Database

Abstract

The present invention relates in general to semiconductor devices and, more particularly, to integrated circuits having components formed on a low capacitance region of a semiconductor die. A low-capacitance dielectric isolation structure and method of making that maintains a low cost while producing a structure having improved surface planarity.