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FABRICATION OF AN AIR-GAP-FILED SILICON DIOXIDE NETWORK AS A LOW-K DIELECTRIC FILM

IP.com Disclosure Number: IPCOM000007369D
Publication Date: 2002-Mar-19

Publishing Venue

The IP.com Prior Art Database

Abstract

The present invention relates in general to semiconductor devices and, more particularly, to integrated circuits having components formed on a low capacitance region of a semiconductor die. In summary, the present invention proposes a low-capacitance dielectric isolation structure and method of making that maintains a low cost while producing a structure having improved surface planarity as well as rugged mechanical properties.