FABRICATION OF AN AIR-GAP-FILED SILICON DIOXIDE NETWORK AS A LOW-K DIELECTRIC FILM
Publication Date: 2002-Mar-19
The IP.com Prior Art Database
The present invention relates in general to semiconductor devices and, more particularly, to integrated circuits having components formed on a low capacitance region of a semiconductor die. In summary, the present invention proposes a low-capacitance dielectric isolation structure and method of making that maintains a low cost while producing a structure having improved surface planarity as well as rugged mechanical properties.