Browse Prior Art Database

REOXIDIZED NITRIC OXIDE (ReoxNO or RNO) PROCESS

IP.com Disclosure Number: IPCOM000007379D
Original Publication Date: 1995-Mar-01
Included in the Prior Art Database: 2002-Mar-20

Publishing Venue

Motorola

Related People

Authors:
Bikas Maiti Philip J. Tobin Yoshio Okada Sergio A. Ajuria Kimberly G. Reid

Abstract

Reoxidation ofan oxynitride gate dielectric grown by nitric oxide (NO) annealing ofthermal oxide has been studied. This process has demonstrated -3-5X improvement ofQao ofactive edge intensive capaci- tors in comparison to thermal oxide, NzO and NO oxynitride. This improvement is believed to be due to the reduction of mechanical stress at the active edge which leads to less local thinning ofgate oxide at the field oxide edge.