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Browse Prior Art Database

QUANTUM SRAM CELL

IP.com Disclosure Number: IPCOM000007488D
Original Publication Date: 1995-Jul-01
Included in the Prior Art Database: 2002-Apr-01
Document File: 2 page(s) / 60K

Publishing Venue

Motorola

Related People

Authors:
Jy-Der Tai Saied Tehrani Jun Shen

Abstract

Figure 1 shows a dual-port SRAM cell which write-transistor when WRITE is high. The data consists of two MOS transistors and two quantum stored on bottom quantum diode is read through diodes. Two stable states of the bottom quantum diode . the read-transistor when READ is HIGH. are used to store data which is written from VDD I I toe III <----quantum diode WRITE READ -----s------x x--'--<------ DATA _I- -I- BITLINE ----->-----I ,---------x--------, ,---->------ write-transistor I read-transistor I I <-----'Cell-state I bottom quantum diode ----> I], I I vss Fig. 1 Dual-port SRAM cell.