LASER PROGRAMMED SUBSTRATE ANTI-FUSE ELEMENT AND METHOD OF OPERATION
Original Publication Date: 2002-Apr-10
Included in the Prior Art Database: 2002-Apr-10
This report describes a new substrate anti-fuse element and method of its operation for semiconductor circuit redundancy or one-time programming applications. This element functions as an electrical diode until it is programmed by laser irradiation; thereafter, it functions as an irreversible electrical short (see Figure 1). To form the diode, a shallow metallurgical junction is formed in a semiconductor substrate by means of ion-implantation or diffusion of the opposite dopant type than the substrate or well that confines the anti-fuse.