Method for Creating Abrupt Extension Profiles and Low Resistance Source Drain Contact Regions
Original Publication Date: 2002-Apr-10
Included in the Prior Art Database: 2002-Apr-10
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We propose a method for implementation of laser annealing to activate the extension and source/drain (S/D) regions of a MOSFET, which allows laterally abrupt junctions in the extension region, good contact resistance, and low diode leakage - a combination not possible in previously published integrations.