Dismiss
The IQ application will be unavailable on Sunday, November 24th, starting at 9:00am ET while we make system improvements. Access will be restored as quickly as possible.
Browse Prior Art Database

Method for Fabricating Magnetic Multilayers

IP.com Disclosure Number: IPCOM000007641D
Original Publication Date: 2002-Apr-10
Included in the Prior Art Database: 2002-Apr-10

Publishing Venue

Motorola

Related People

Authors:
Jamie Schaeffer Rajesh A. Rao Bich-Yen Nguyen

Related Documents

Patent/Patent Application:
U.S. Patent No. 6,139,700 U.S. Patent No. 6,174,809 U.S. Patent No. 6,203,613 [+details]
Other References:
58 - OTHER IEEE Trans. Magn. 30, 316 (1994) - OTHER Phys. Rev. Lett. 66, 2152 (1991) - OTHER IEEE Trans. Magn. 31, 3206 (1995) - OTHER Jpn., 69, 2182 (2000) - OTHER [+more]

Abstract

A method for fabricating magnetic multilayers as required for high-aspect ratio cladding structures and novel giant magnetoresistance (GMR) heterostructures for use in Magnetic Random Access Memories (MRAM) is described. Cladding structures, which are formed on three sides of a Cu line in the back-end of typical IC processing, present trench fill and step coverage issues that threaten the extendibility of MRAM technologies. In GMR multilayer devices, thickness non-uniformity of the individual layers and rough interfaces tend to degrade the coupling between ferromagnetic layers resulting in a poorly defined high-resistance state and degraded device performance. An atomic layer deposition (ALD) process that achieves conformal side wall depositions with the desired film composition for the barrier/cladding/barrier stack as well as atomically sharp interfaces in GMR multilayers with precision control of layer thickness is described. A method of obtaining the desired NiFe alloy composition using ALD is described. Furthermore, a GMR multilayer structure with all layers consisting of bimetal alloys or oxide materials is described.