POST W CMP CLEAN
Original Publication Date: 1996-Aug-01
Included in the Prior Art Database: 2002-Apr-24
Advanced multi-level metal technologies being developed in research and development laboratories use oxide chemical mechanical polishing (CMP) to planarize an inter-level dielectric (ILD) and tung- sten (w) CMP to define the W interconnect via plugs. The simplified integration is: deposit and pattern bottom metal; deposit and CMP planarize ILD, etch vias; deposit W fill after necessary glue layer; define the via plug by polishing the excess W and the glue layer that lies outside the vias; and deposit and pat- tern an overlying metal layer.