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POST W CMP CLEAN Disclosure Number: IPCOM000007787D
Original Publication Date: 1996-Aug-01
Included in the Prior Art Database: 2002-Apr-24

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Papu D. Maniar Kathleen Perry


Advanced multi-level metal technologies being developed in research and development laboratories use oxide chemical mechanical polishing (CMP) to planarize an inter-level dielectric (ILD) and tung- sten (w) CMP to define the W interconnect via plugs. The simplified integration is: deposit and pattern bottom metal; deposit and CMP planarize ILD, etch vias; deposit W fill after necessary glue layer; define the via plug by polishing the excess W and the glue layer that lies outside the vias; and deposit and pat- tern an overlying metal layer.