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Browse Prior Art Database

USING SWITCHING MOSFETs IN LOW-NOISE FRONT END AMPLIFIERS

IP.com Disclosure Number: IPCOM000007845D
Original Publication Date: 1996-Nov-01
Included in the Prior Art Database: 2002-Apr-29
Document File: 2 page(s) / 107K

Publishing Venue

Motorola

Related People

Authors:
Eliav Zipper Yehuda Eder Yair Shapira

Abstract

High dynamic range of the HF SSB receiver is one ofits important design goals. High dynamic range can be achieved by using RF elements that have high IP3, high 1 dB compression point and low noise figure. RF amplifiers are such elements, and increas- ing their IP3 or their 1 dB compression point gener- ally increases their noise figure. Therefore, high dynamic range amplifiers are not trivial and special schemes are adopted for high dynamic range RF amplifiers.