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Browse Prior Art Database

INTEGRATED STACKED GATE OXIDE AND INTERPOLY OXIDE

IP.com Disclosure Number: IPCOM000007891D
Original Publication Date: 1996-Nov-01
Included in the Prior Art Database: 2002-May-02

Publishing Venue

Motorola

Related People

Authors:
Craig Cavins Ko-Min Chang Craig Swift Hsing-Huang Tseng Wayne Paulson

Abstract

For microcontrollers with embedded EEPROM, burn-in cost can be as high as $0.25 per part. The dominant burn-in failure mode has been the EEPROM select gate failures. A process for 1.2 pm design rules uses a 35OA thermal oxide for the select gate. It is desirable to make this select gate dielec- tric more robust in order to reduce or eliminate the burn-in failures and thereby eliminate the need for a costly burn-in.