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TFSOI WITH IMPROVED OXIDATION RESISTANCE (TO REDUCE ISOLATION INDUCED STRESSES AND LEAKAGE)

IP.com Disclosure Number: IPCOM000007931D
Original Publication Date: 1996-Nov-01
Included in the Prior Art Database: 2002-May-07
Document File: 2 page(s) / 188K

Publishing Venue

Motorola

Related People

Authors:
N. David Theodore Marco Racanelli Tom Wetteroth

Abstract

Thin-film silicon-on-insulator (TFSOI) technol- ogy is being evaluated for low-power applications where controlling off-state leakage is of critical impor- tance. The current art involves conventional LOCOS isolation on TFSOI substrates . This tech- nique has the following problem. Once the super- frcial-Si in the LOCOS window is completely oxi- dized, oxygen diffuses through the resulting oxide (and the TFSOI buried oxide) to react with the substrateSi. The volume expansion associated with oxidation of the substrate-Si causes localized bend- ing of adjacent superficial-Si . This bend- ing causes stresses, dislocations and associated elec- trical leakage in TFSOI devices. Our invention is designed to minimize such bending of the super- ficial-Si and thus eliminate oxidation induced stresses, dislocations and electrical leakage.