Browse Prior Art Database

DEVICE AND METHOD TO SUPPRESS INJECTED SUBSTRATE CURRENT

IP.com Disclosure Number: IPCOM000007952D
Publication Date: 2002-May-07

Publishing Venue

The IP.com Prior Art Database

Abstract

A protection device for a semiconductor device (100) having a high voltage device and a low voltage device is disclosed. The device includes a n+ drain region (110) belonging to the high voltage device. A first collector terminal (115) formed as a contact to an n-region (114) and a second collector terminal (119) offset from the first collector terminal (115) formed as a contact to an n-region (118) are also provided. A highly doped p+ region (102) is formed by implanting a high concentration of dopants into the device (100). A protection transistor is formed by the drain region (110), a p region (102) and the first collector terminal (115), and a parasitic transistor is formed by the drain region (110), the highly doped p+ region (102) and the second collector (119). Due to the highly doped p+ region (102), the majority of current injected at the drain is collected at the first collector (115), protecting the low voltage device (122).