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Method for Creating Abrupt Extension Profiles and Low Resistance Source Drain Contact Regions

IP.com Disclosure Number: IPCOM000008088D
Original Publication Date: 2002-May-16
Included in the Prior Art Database: 2002-May-16

Publishing Venue


Related People

Michael J. Rendon Eric J. Verret William J. Taylor David C. Sing


We propose a method for implementation of laser annealing to activate the extension and source/drain (S/D) regions of a MOSFET, which allows laterally abrupt junctions in the extension region, good contact resistance, and low diode leakage - a combination not possible in previously published integrations.