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Disclosed is a method for the use of an implant marker layer for the damascene etch end detector. Benefits include improved throughput and defect reduction.
English (United States)
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100% of the total text.
Method for the use of an implant marker layer for the
damascene etch end detector
Disclosed is a method for the use of an implant marker layer for
the damascene etch end detector. Benefits include improved throughput and
Conventionally, SiN or SiC is used as
the via stop layer (see Figure 1). Alternatively, a metal shunt serves as the
via etch stop layer (see Figure 2).
disclosed method uses an implant specie and etch-process end-point detector to
detect a specified etch depth. The incorporation of an implant step improves
the etch process for ILD layers.
implanted marker layer is used for via etch (see Figure 3). A metal shunt or a
very thin layer of Si3N4 or SiC is used for a Cu
the implanted marker is detected during the via etch, an additional
pre-determined etch time is used to complete the via etch process before
hitting the Cu (see Figure 4, after Via etch, ash, and clean). A metal shunt or
a very thin layer of Si3N4 or SiC can be used for a Cu diffusion barrier.
trench etch, a stop marker is implanted (see Figure 5).
the trench etch stop marker is detected during Trench etch, ash, and clean, the
etch process can be halted (see Figure 6).
via or trench depth in a damascene process can be targeted by the implant