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Method for Gate Charging Reduction Using Plasma With Wavelengths Greater Than 1.07 um

IP.com Disclosure Number: IPCOM000008218D
Publication Date: 2002-May-28
Document File: 4 page(s) / 115K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method for significantly reducing charging damage in the gate oxide during the metal etch process.