New Injector Design for CVD Process Chambers
Original Publication Date: 2002-May-31
Included in the Prior Art Database: 2002-May-31
When fabricating semiconductor devices, within-wafer uniformity is an important parameter to control. This is especially true for 300mm wafers, since uniformity is harder to produce over an area 2.25 times larger than 200mm wafers. This improvement is targeted for high-density plasma (HDP) chemical vapor deposition (CVD) reactors that deposit thin oxide films.