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DUAL-CHANNEL MOVABLE GATE FETs

IP.com Disclosure Number: IPCOM000008295D
Original Publication Date: 1997-Sep-01
Included in the Prior Art Database: 2002-Jun-04

Publishing Venue

Motorola

Related People

Authors:
Lisa Zhang Gary Li Frank Shemansky

Abstract

In order to fit a large number of movable gates within a limited space, we have proposed the dual- channel design concept that a single channel is split into two by inserting an additional drain in the middle. In other words, a single gate would cover two channels as schematically illustrated in Figure 1. In sensor applications, the gate (Vg) and drain (Vd) are biased at the same potential. There is no electro- static attraction force between the gate and the underneath drain. For applications in a lateral GFET, the dual-channel design is shown schemati- cally in Figure 2, where the movable gate only covers part of the underlying active area. In a vertical GFET (z-axis), the dual-channel design can also be used in which the transducer size may be reduced.