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Low Capacitance Bond Pad Structure for Low K Intermetal Dielectric Silicon Process

IP.com Disclosure Number: IPCOM000008418D
Publication Date: 2002-Jun-12
Document File: 2 page(s) / 145K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method that consists of a bond pad structure used to conduct electrical signals on and off a silicon circuit via a wire bond. Benefits include less distortion of high frequency signals on and off the silicon circuit.