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METHOD OF ELECTROCHEMICALLY ETCHING DIAPHRAGM FOR CMOS INTEGRATED PRESSURE SENSOR

IP.com Disclosure Number: IPCOM000008452D
Original Publication Date: 1997-Dec-01
Included in the Prior Art Database: 2002-Jun-14

Publishing Venue

Motorola

Related People

Authors:
K. Sooriakumar Bob Tucker Cindy Ray

Abstract

Making a thin diaphragm in silicon wafers for and electrochemical etch stop (ECE). sensing applications is a critical process in sensor fabrication. For pressure sensors, deep cavities are Among these etch stop technologies, the elec- etched in the back of silicon wafers to make thin trochemical etch stop offers many advantages. ECE diaphragms (see Figure 1). Many etch stop technolo- can be used in conjunction with Bipolar as well as gies are used in forming the diaphragm (see Figure 2). CMOS integrated circuits.