TRANSISTOR THERMAL IMPROVEMENT
Original Publication Date: 1998-Mar-01
Included in the Prior Art Database: 2002-Jun-27
With the shrink path of new SmartMOS tech- nologies, the factor Ron.Area always decreases with each process generation. So for a given Ron, the area becomes smaller; this results in a new problem of energy capability. As the energy is proportional to the area for an energy pulse given, when the area decreases the energy capability decreases too. Due to this problem, the shrink of the power component is limited.