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CIRCUIT FOR GENERATING HIGH POSITIVE-TEMPERATURE-COEFFICIENT VOLTAGES

IP.com Disclosure Number: IPCOM000008624D
Original Publication Date: 1998-Mar-01
Included in the Prior Art Database: 2002-Jun-27

Publishing Venue

Motorola

Related People

Authors:
John E. (Ted) Hanna

Abstract

Many semiconductor processes have layers with high sheet resistivity that are used to generate high value resistors. Typically, the resistance of such a layer will be well controlled at room temperature but will have a large positive temperature coeffi- cient of resistance (TCR). If a small current with a low TC is required, either a voltage must be gener- ated which has a high temperature coefficient of voltage (TCV) which matches the TCR of the resistor, or a layer with lower sheet resistivity must be used requiring much more area for the resistor.