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A PROCESS FOR MEASURING NITROGEN IN ULTRA-THIN OXYNITRIDE DIELECTRIC FILM

IP.com Disclosure Number: IPCOM000008764D
Original Publication Date: 1998-Jun-01
Included in the Prior Art Database: 2002-Jul-10

Publishing Venue

Motorola

Related People

Authors:
Rama I. Hegde Bikas Maiti Philip J. Tobin Kimberly G. Reid

Abstract

A process for measuring nitrogen in an ultra- thin (<30 A) oxynitride film by secondary ion mass spectrometry (SIMS) is reported in this paper. This process is not limited to nitrogen in oxynitride, but it can be used for any low level element (dopant or impurity) analysis in ultra-thin films. Further, this method can be extended to any depth profiling composition measurement tool such as Auger elec- tron spectroscopy (AES), Rutherford backscattering (RBS) and X-ray photoelectron spectroscopy (XPS).