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Disclosed is a method to form air gaps between copper interconnect lines by dissolving in a solvent a sacrificial solid that may or may not be a dielectric. Benefits include improved functionality.
English (United States)
This text was extracted from a Microsoft Word document.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately
50% of the total text.
Method to form air gaps between copper interconnect lines
by dissolving in a solvent a sacrificial solid that may or may not be a
Disclosed is a method to form air gaps between copper
interconnect lines by dissolving in a solvent a sacrificial solid that may or
may not be a dielectric. Benefits include improved functionality.
Parasitic crosstalk occurs between
adjacent interconnect lines in the backend of the chip (see Figure 1).
Conventionally, this problem is solved by using low-k dielectrics (with
a dielectric constant ~ 2.5) between copper lines. The requirement to decrease
the dielectric constant further is expected to become increasing important.
is the process by which redundant lines are introduced into the interconnect
superstructure, in this case to provide structural and mechanical support. The
incorporation of dummification to support the interconnect superstructure is
not the focus of the disclosed method.
The disclosed method forms air gaps
between copper interconnect lines by dissolving a sacrificial solid in a
The key elements
of the method include (see Figure 2):
Patterning a solid sacrificial material that
may or may not be a dielectric
Dissolving away the material completely in a
solvent to form an air gap
The disclosed method provides
Improved functionality due to a straightforward process to form air-gaps
within backend interconnects