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PROPOSED ELECTRODE MATERIAL FOR FERROELECTRIC NONVOLATILE MEMORY CAPACITORS

IP.com Disclosure Number: IPCOM000008905D
Original Publication Date: 1999-Jan-01
Included in the Prior Art Database: 2002-Jul-23

Publishing Venue

Motorola

Related People

Authors:
Beth Baumert Tse-Lun Tsai Li-Hsin Chang

Abstract

In order to store charge in a ferroelectric non- volatile memory, capacitors comprised of an elec- trode/ ferroelectric/ electrode structure will be used. One of the materials currently being researched for this use is strontium bismuth tantalate (SBT) because of its high write speed and low-voltage write, which would make it advantageous for use in contactless smartcards.