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Disclosed is a method for a uniform Cu line at the scribe line to prevent cracks caused during wafer thinning in vertically stacked wafer technology. Benefits include improved reliability.
English (United States)
This text was extracted from a Microsoft Word document.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately
70% of the total text.
Method for a uniform Cu line at the scribe line to prevent
cracks caused during wafer thinning in vertically stacked wafer technology
Disclosed is a method for a
uniform Cu line at the scribe line to prevent cracks caused during wafer
thinning in vertically stacked wafer technology. Benefits include improved
With conventional metal line design, wafer
cracks occur when a bonded wafer is
thinned down to approximately 10 µm. Cracks that start at the edge propagate
toward the center of the wafer, following scribe lines (see Figure 1). Cracking
occurs due to the lack of Cu lines at the scribe lines so that a large
area is not bonded during the Cu-to-Cu bonding process. Creating a guard ring structure around a wafer edge prevents the oxidation
of exposed Cu lines and improves mechanical integrity near the saw cut (see
Figure 2). However, this structure does not prevent cracks caused by thinning
at the scribe lines.
Additional lithographical patterning
at the edge of wafer reduces cracking (see Figure 3). However, patterning is an
expensive solution due to additional litho steps.
The disclosed method is a uniform Cu
metal line design to prevent wafer cracking along the scribe line caused
during wafer-thinning techniques. Cracks propagate along the unbonded scribe
lines during the thinning process. A uniform small-pitch Cu metal line with
greater than 50 % density prevents cracking.
The key element
of the method includes uniform small-pitch Cu lin...