Browse Prior Art Database

INTEGRATED SILICON CARBIDE UV DETECTOR

IP.com Disclosure Number: IPCOM000009031D
Original Publication Date: 1999-Jan-01
Included in the Prior Art Database: 2002-Aug-02

Publishing Venue

Motorola

Related People

Authors:
Karen Moore Charles Weitzel Mohit Bhatnagar Tom Wetteroth Syd Wilson

Abstract

Silicon carbide is an ideal material from which to fabricate UV detectors because of its high absorp- tion at UV wavelengths (Figure 1). In fact, UV detectors from SIC are commercially available. However SIC technology is very immature com- pared to Si technology as is evidenced by the very small wafer size presently available, 2 inch diame- ter. This small wafer size severely limits Sic's potential for high volume manufacturing. In addi- tion, it would be desirable to incorporate analysis circuitry to the UV detector, but the present level of development of CMOS circuits from SIC is not ade- quate to perform such analytical functions. The combination of a SIC UV detector with Si CMOS circuitry on a bulk Si wafer would overcome the above mentioned limitations.