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SELECTIVE AREA LAYER TRANSFER (SALT) FOR WIDE BANDGAP THIN LAYERS ON SI

IP.com Disclosure Number: IPCOM000009032D
Original Publication Date: 1999-Jan-01
Included in the Prior Art Database: 2002-Aug-02

Publishing Venue

Motorola

Related People

Authors:
Tom Wetteroth Karen Moore Mohit Bhatnagar Charles Weitzel Syd Wilson

Abstract

The high field strength and wide bandgap of semiconducting silicon carbide gives it a very low intrinsic electronic carrier concentration. As a result the carrier generation rate in Sic is fourteen orders of magnitude lower than that in Si. This makes Sic an ideal material for NVRAM (Non-Volatile Random Access Memory) memory cells, Ultra- Violet detector elements, and power handling tran- sistors at both low and high frequencies.