DEVICE FOR INTRINSIC STRESS MEASUPEMENT
Original Publication Date: 1999-Jan-01
Included in the Prior Art Database: 2002-Aug-02
This device can be used to determine the intrin- sic stresses induced in wafer processes such as met- alization and bumping. The sensing device uses an etched silicon structure with a specified membrane thickness. The sensing device is put into the processes which are under investigation or being monitored. The process induced stresses will cause Si membrane deformation. The stresses can be determined by measuring the deformation of the membrane.