Dismiss
InnovationQ will be updated on Sunday, September 22, from 10am-noon ET. You may experience brief service interruptions during that time.
Browse Prior Art Database

DEVICE FOR INTRINSIC STRESS MEASUPEMENT

IP.com Disclosure Number: IPCOM000009034D
Original Publication Date: 1999-Jan-01
Included in the Prior Art Database: 2002-Aug-02
Document File: 2 page(s) / 76K

Publishing Venue

Motorola

Related People

Authors:
Yifan Guo Dawei Zheng Vijay Sarihan Jong-Kai Lin William Lytle Kenneth Goldman

Abstract

This device can be used to determine the intrin- sic stresses induced in wafer processes such as met- alization and bumping. The sensing device uses an etched silicon structure with a specified membrane thickness. The sensing device is put into the processes which are under investigation or being monitored. The process induced stresses will cause Si membrane deformation. The stresses can be determined by measuring the deformation of the membrane.