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SILICON CARBIDE NVRAM ON SILICON

IP.com Disclosure Number: IPCOM000009039D
Original Publication Date: 1999-Jan-01
Included in the Prior Art Database: 2002-Aug-02

Publishing Venue

Motorola

Related People

Authors:
Charles Weitzel Karen Moore Mohit Bhatnagar Tom Wetteroth Syd Wilson

Abstract

The wide bandgap of semiconducting silicon carbide gives it a very low intrinsic electronic carr- er concentration. Therefore the carrier generation rate in SIC is fourteen orders of magnitude lower than that in Si. This makes SIC an ideal material for NVRAM (Non-Volatile Random Access Memory) memory cells. However SIC technology is very immature compared to Si technology as is evi- denced by the very small wafer size presently avail- able, 2 inch diameter. This small wafer size severe- ly limits Sic's potential for high volume manufac- turing. These limitations are overcome by combin- ing the benefits of Si and Sic on a bulk Si wafers.