SENSING CIRCUIT AND METHOD FOR FLASH MEMORY
Original Publication Date: 1999-Jan-01
Included in the Prior Art Database: 2002-Aug-05
All memory cell arrays utilize either a voltage or current sense method, in one form or another, to determine the memory bit cell state. This electrical state is then propagated to the final buffer stage through two or more cascaded amplifier stages while meeting or exceeding the imposed design con- straints, such as read access time, power dissipation and die area.