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SENSING CIRCUIT AND METHOD FOR FLASH MEMORY

IP.com Disclosure Number: IPCOM000009052D
Original Publication Date: 1999-Jan-01
Included in the Prior Art Database: 2002-Aug-05

Publishing Venue

Motorola

Related People

Authors:
Thomas Bushey James Caravella Jeremy Moore

Abstract

All memory cell arrays utilize either a voltage or current sense method, in one form or another, to determine the memory bit cell state. This electrical state is then propagated to the final buffer stage through two or more cascaded amplifier stages while meeting or exceeding the imposed design con- straints, such as read access time, power dissipation and die area.