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IMPROVEMENT OF THE ALUMINUM ETCH PROCESS, ON SUB-MICRON TECHNOLOGY, IN THE AME 8330 UTILIZING N2 AS A PASSIVATING GAS

IP.com Disclosure Number: IPCOM000009140D
Original Publication Date: 1999-Jun-01
Included in the Prior Art Database: 2002-Aug-09
Document File: 2 page(s) / 128K

Publishing Venue

Motorola

Related People

Authors:
Robert J. Wilson

Abstract

The transfer of a 0.5~ MMBiCMOS technology necessitated developing a Nitrogen passivation process on Applied 8330 Metal Etch systems in order to be able to etch sub-micron Aluminum lines. The resultant etched metal lines had to meet speci- fied criteria which were comparable to the results of those obtained from a process which utilized a Lam 9600 (variable gap) Metal Etch system.