IMPROVEMENT OF THE ALUMINUM ETCH PROCESS, ON SUB-MICRON TECHNOLOGY, IN THE AME 8330 UTILIZING N2 AS A PASSIVATING GAS
Original Publication Date: 1999-Jun-01
Included in the Prior Art Database: 2002-Aug-09
The transfer of a 0.5~ MMBiCMOS technology necessitated developing a Nitrogen passivation process on Applied 8330 Metal Etch systems in order to be able to etch sub-micron Aluminum lines. The resultant etched metal lines had to meet speci- fied criteria which were comparable to the results of those obtained from a process which utilized a Lam 9600 (variable gap) Metal Etch system.